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JAN1N5621/TR

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Description: DIODE GEN PURP 800V 1A

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Markeren:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
500 nA @ 800 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 3 A
Package:
Tape & Reel (TR)
Series:
Military, MIL-PRF-19500/429
Capacitance @ Vr, F:
-
Supplier Device Package:
A, Axial
Reverse Recovery Time (trr):
300 ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
A, Axial
Voltage - DC Reverse (Vr) (Max):
800 V
Current - Average Rectified (Io):
1A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
500 nA @ 800 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 3 A
Package:
Tape & Reel (TR)
Series:
Military, MIL-PRF-19500/429
Capacitance @ Vr, F:
-
Supplier Device Package:
A, Axial
Reverse Recovery Time (trr):
300 ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
A, Axial
Voltage - DC Reverse (Vr) (Max):
800 V
Current - Average Rectified (Io):
1A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
JAN1N5621/TR
Diode 800 V 1A door gat A, axiale