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WNSC2D30650WQ

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Betaling & het Verschepen Termijnen

Description: SILICON CARBIDE SCHOTTKY DI

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Markeren:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 30 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
980pF @ 1V, 1MHz
Supplier Device Package:
TO-247-2
Reverse Recovery Time (trr):
0 ns
Mfr:
WeEn Semiconductors
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
175°C
Package / Case:
TO-247-2
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
30A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
WNSC2
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 30 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
980pF @ 1V, 1MHz
Supplier Device Package:
TO-247-2
Reverse Recovery Time (trr):
0 ns
Mfr:
WeEn Semiconductors
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
175°C
Package / Case:
TO-247-2
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
30A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
WNSC2
WNSC2D30650WQ
Diode 650 V 30A door gat TO-247-2