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IDH04G65C6XKSA1

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Betaling & het Verschepen Termijnen

Description: DIODE SIL CARB 650V 12A TO220-2

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Markeren:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
14 µA @ 420 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.35 V @ 4 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
205pF @ 1V, 1MHz
Supplier Device Package:
PG-TO220-2
Reverse Recovery Time (trr):
0 ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
12A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
IDH04G65
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
14 µA @ 420 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.35 V @ 4 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
205pF @ 1V, 1MHz
Supplier Device Package:
PG-TO220-2
Reverse Recovery Time (trr):
0 ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
12A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
IDH04G65
IDH04G65C6XKSA1
Diode 650 V 12A door het gat PG-TO220-2