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TRS6E65F,S1Q

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Betaling & het Verschepen Termijnen

Description: DIODE SIL CARB 650V 6A TO220-2L

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Markeren:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
30 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 6 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
22pF @ 650V, 1MHz
Supplier Device Package:
TO-220-2L
Reverse Recovery Time (trr):
0 ns
Mfr:
Toshiba Semiconductor and Storage
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
175°C (Max)
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
6A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
TRS6E65
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
30 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 6 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
22pF @ 650V, 1MHz
Supplier Device Package:
TO-220-2L
Reverse Recovery Time (trr):
0 ns
Mfr:
Toshiba Semiconductor and Storage
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
175°C (Max)
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
6A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
TRS6E65
TRS6E65F,S1Q
Diode 650 V 6A door gat TO-220-2L